TZ800N18KOFB1-INFINEON
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  • TZ800N18KOFB1-INFINEON
  • TZ800N18KOFB1
  • INFINEON
  • Mitsubishi IGBT Module — 1200V
  • Data Sheet for TZ800N18KOFB1
  • Description

    The Infineon TZ800N18KOFB1 is a high-current, high-voltage thyristor power semiconductor module rated for 800A average on-state current and 1800V repetitive peak off-state voltage. Built on Infineon's proven FB1 housing platform, this module is engineered for phase-control and line-commutated converter topologies where rugged blocking capability, low thermal resistance, and long operational life are non-negotiable. The TZ800N18KOFB1 is a direct solution for applications demanding reliable SCR switching at utility-scale power levels in harsh industrial environments.

    The TZ800N18KOFB1 is widely deployed in heavy industrial systems including medium-voltage AC/DC converters, DC motor soft-starters, electrochemical rectifier banks, crane and hoist drives, mining equipment power stages, and grid-tie induction heating systems. Its high surge current tolerance makes it equally suited for transformer inrush protection and capacitor bank switching. Utilities, OEMs, and MRO operations across steel, chemical processing, marine, and oil-and-gas sectors rely on this module to anchor critical power conversion infrastructure where unplanned downtime is unacceptable.

    Quick Reference: TZ800N18KOFB1

    Part Number TZ800N18KOFB1
    Manufacturer Infineon Technologies
    Type Thyristor (SCR) Power Module
    Current Rating 800A (IT(AV))
    Voltage Rating 1800V (VDRM/VRRM)
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the TZ800N18KOFB1:

    • 800A average on-state current (IT(AV)) with high surge current (ITSM) capability for robust overload tolerance
    • 1800V repetitive peak off-state and reverse voltage (VDRM/VRRM) for wide safety margin in medium-voltage circuits
    • Infineon FB1 pressure-contact module housing ensures low thermal resistance junction-to-case and long-term contact integrity under thermal cycling
    • Low on-state threshold voltage (VT0) and slope resistance minimize conduction losses in continuous high-current operation
    • Isolated baseplate construction supports standard heatsink mounting with full electrical isolation from the cooling surface
    • Gate trigger characteristics optimized for compatibility with industrial firing boards and digital phase-control firing circuits

    With a factory lead time of 99 weeks on new production, the TZ800N18KOFB1 presents a serious procurement challenge for maintenance teams managing aging drives or executing capital projects on compressed timelines. Infineon's FB1-platform thyristor modules are frequently found in installed equipment that predates current product revisions, making like-for-like replacement stock increasingly difficult to source through standard distribution channels. Purchasing engineers facing long-lead exposure or single-source risk should secure buffer inventory now to protect system uptime and avoid costly production interruptions.

    ATI Accurate Technology, based in Palmetto, Florida, stocks the TZ800N18KOFB1 as new OEM product ready for same-day shipment on orders placed before 5PM EST. ATI specializes in hard-to-find, obsolete, and long-lead power semiconductors — IGBTs, thyristors, diodes, and rectifier modules. Volume pricing is available. Contact our team directly at 239-734-7566 or sales@igbts.us to confirm availability, request a quote, or discuss application support.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
SAME DAY SHIPPING FOR ORDERS PLACED BY 5PM EST ON ALL STOCK ITEMS

** 1 Year Warranty on All Products **
In Stock: 6
  • 6
  • 6 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $535.00 USD
Regular price Sale price $535.00 USD
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