QM30DY-H-MITSUBISHI
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  • QM30DY-H-MITSUBISHI
  • QM30DY-H
  • MITSUBISHI
  • Mitsubishi IGBT Module
  • Data Sheet for QM30DY-H
  • Description

    The Mitsubishi QM30DY-H is a dual-configuration IGBT module engineered for precise, high-frequency switching in industrial power conversion systems. Built to Mitsubishi's established quality standards for discrete power semiconductors, this module integrates insulated gate bipolar transistor technology with fast-recovery freewheeling diodes in a compact, thermally efficient package. Its design prioritizes low switching losses and stable gate threshold characteristics across operating temperature ranges, making it a dependable choice for engineers specifying components in variable-frequency drives, inverters, and servo amplifier platforms where thermal management and switching performance are critical.

    The QM30DY-H sees broad deployment across industrial automation and motion control applications. Variable-frequency drives (VFDs) controlling AC induction and servo motors represent its most common use case, where its switching speed and current handling reduce harmonic distortion and improve drive efficiency. It is also found in uninterruptible power supplies (UPS), solar inverters, welding equipment power stages, elevator drive systems, and general-purpose inverter platforms. OEM machine builders and field maintenance teams working on legacy Mitsubishi-based drive systems frequently require this module as a direct replacement during scheduled or emergency maintenance.

    Quick Reference: QM30DY-H

    Part Number QM30DY-H
    Manufacturer Mitsubishi
    Type IGBT Module (Dual)
    Current Rating 30A
    Voltage Rating 600V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the QM30DY-H:

    • Dual IGBT configuration with integrated fast-recovery freewheeling diodes for simplified circuit design and reduced external component count
    • 600V collector-emitter voltage (VCES) and 30A continuous collector current (IC) rating suitable for mid-range industrial drive applications
    • Low saturation voltage (VCE(sat)) characteristic minimizes on-state conduction losses and reduces heat sink requirements in high-duty-cycle operation
    • Isolated base plate construction provides electrical isolation between the power circuit and mounting surface, supporting standard heatsink assembly without additional insulation hardware
    • Optimized gate charge and switching transition times support PWM frequencies typical in modern industrial inverter topologies
    • Compact module footprint compatible with Mitsubishi's established mounting and bussing conventions, simplifying like-for-like field replacement in existing drive assemblies

    With a factory lead time of 35 weeks for new production, the QM30DY-H presents a genuine supply chain challenge for maintenance and procurement teams facing unplanned downtime or scheduled rebuilds. This is a recurring issue with Mitsubishi IGBT modules across the QM series, particularly for legacy drive platforms no longer in active production. ATI Accurate Technology maintains stock of hard-to-find and long-lead-time power semiconductors specifically to address these gaps — ensuring your repair timeline is measured in hours, not months. Verify current stock levels before your next scheduled outage or emergency event.

    ATI Accurate Technology is headquartered in Palmetto, Florida, and specializes in IGBTs, thyristors, diodes, and rectifier modules — including obsolete and long-lead-time parts. Orders placed before 5PM EST ship same day. Contact our team directly for volume pricing, cross-reference assistance, or time-sensitive procurement needs. Call 239-734-7566 or email sales@igbts.us.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
SAME DAY SHIPPING FOR ORDERS PLACED BY 5PM EST ON ALL STOCK ITEMS

** 1 Year Warranty on All Products **
In Stock: 3
  • 3
  • 3 (Can ship in We can ship in 7-10 Days)
  • 35 Weeks
Regular price $96.00 USD
Regular price Sale price $96.00 USD
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