QM150E2Y-HD-MITSUBISHI
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  • QM150E2Y-HD-MITSUBISHI
  • QM150E2Y-HD
  • MITSUBISHI
  • Powersem Power Semiconductor Module
  • Data Sheet for QM150E2Y-HD
  • Description

    The Mitsubishi QM150E2Y-HD is a 150A IGBT module engineered for high-efficiency power switching in industrial inverter and converter systems. Built to Mitsubishi's proven power module standards, this device integrates fast-switching IGBT technology with optimized gate characteristics to minimize switching losses across a wide load range. Its robust construction supports reliable operation in thermally demanding environments, making it a dependable choice for OEM equipment and field replacement applications where performance consistency and long service life are non-negotiable requirements.

    The QM150E2Y-HD is widely deployed in AC motor drives, servo amplifiers, UPS systems, induction heating equipment, and industrial welding inverters. Its switching speed and current handling capability make it well-suited for variable frequency drive (VFD) platforms in manufacturing, HVAC, and process automation. Power supply designers and drive system integrators also specify this module in traction and regenerative braking applications where precise gate control and low conduction losses directly impact system efficiency and thermal management margins.

    Quick Reference: QM150E2Y-HD

    Part Number QM150E2Y-HD
    Manufacturer Mitsubishi
    Type IGBT Module
    Current 150A
    Voltage See datasheet for blocking voltage rating
    Availability In Stock – Same-Day Shipping
    Condition New OEM

    Key Features of the QM150E2Y-HD:

    • 150A continuous collector current rating suitable for high-power industrial drive stages
    • Low VCE(sat) characteristics reduce conduction losses and heat generation under full-load conditions
    • Integrated freewheeling diodes optimized for fast recovery, minimizing reverse recovery losses during hard switching
    • Isolated baseplate construction simplifies heatsink mounting and improves system-level thermal resistance management
    • Gate drive compatible with standard IGBT driver ICs, simplifying drop-in replacement in existing drive platforms
    • Designed to Mitsubishi's rigorous reliability screening standards for long operational life in continuous-duty industrial environments

    With a factory lead time of 40 weeks for new production, the QM150E2Y-HD presents a significant procurement challenge for maintenance teams managing unplanned downtime or production engineers managing build schedules. Obsolescence risk compounds this issue as long-running industrial platforms continue to depend on this module for field service. Waiting on factory fulfillment is rarely an option when a drive system is down. Sourcing from a stocking distributor with verified new OEM inventory is the fastest path to restoring equipment to service without compromising component quality or traceability.

    ATI Accurate Technology, located in Palmetto, Florida, maintains ready inventory of the QM150E2Y-HD and ships same-day on orders placed before 5PM EST. We specialize in IGBTs, thyristors, diodes, and power modules including hard-to-find and long-lead-time parts. Volume pricing is available for MRO and production quantities. Contact our team directly at 239-734-7566 or sales@igbts.us to confirm stock levels, request a quote, or discuss your broader power semiconductor sourcing needs.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
SAME DAY SHIPPING FOR ORDERS PLACED BY 5PM EST ON ALL STOCK ITEMS

** 1 Year Warranty on All Products **
In Stock: 3
  • 3
  • 6 (Can ship in We can ship in 7-10 Days)
  • 40 Weeks
Regular price $178.50 USD
Regular price Sale price $178.50 USD
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