PM75CSD060 - MITSUBISHI

INTELLIGENT POWER MODULE

FLAT BASED TYPE - INSULATED PACKAGE

FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1��m fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package compatibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM. ���3�� 75A, 600V Current-sense IGBT for 15kHz switching ��� Monolithic gate drive & protection logic ��� Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices) ��� Acoustic noise-less 5.5/7.5kW class inverter application ��� UL Recognized Yellow Card No.E80276(N) File No.E80271