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PM150RSD060 - MITSUBISHI

PM150RSD060-MITSUBISHI
PM150RSD060 - MITSUBISHI - ATI Accurate Technology
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In Stock: 4
  • 4
  • 36 (Can ship in 7-10 days)
  • 33 Weeks
FEATURES
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1��m fine rule process. For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse recovery characteristics.
c) Keeping the package compatibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
���3�� 150A, 600V Current-sense IGBT for 15kHz switching
��� 50A, 600V Current-sense regenerative brake IGBT
��� Monolithic gate drive & protection logic
��� Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices)
��� Acoustic noise-less 15/18.5kW class inverter application