MG75Q1JS40-TOSHIBA
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  • MG75Q1JS40-TOSHIBA
  • MG75Q1JS40
  • TOSHIBA
  • Toshiba Power Semiconductor
  • Data Sheet for MG75Q1JS40
  • Description

    The Toshiba MG75Q1JS40 is a 75A, 600V IGBT power module engineered for demanding switching applications where efficiency, thermal stability, and reliable gate control are non-negotiable. Built in Toshiba's established discrete power module platform, this device integrates insulated gate bipolar transistor technology with a robust package designed to minimize parasitic inductance and support high switching frequencies. It is a proven solution for engineers specifying components in variable frequency drives, industrial inverters, and regenerative power systems where performance margins are tight and downtime costs are high.

    The MG75Q1JS40 sees widespread deployment across industrial motor drive systems, elevator and crane controls, induction heating equipment, and three-phase inverter stages in UPS and solar energy conversion platforms. Its current and voltage ratings make it well-suited for mid-power industrial designs where a single module can replace multiple discrete devices. HVAC compressor drives, welding power supplies, and servo amplifier output stages are additional application areas where this module's switching characteristics and package format provide a direct performance and integration advantage.

    Quick Reference: MG75Q1JS40

    Part Number MG75Q1JS40
    Manufacturer Toshiba
    Type IGBT Power Module
    Collector Current (IC) 75A
    Collector-Emitter Voltage (VCES) 600V
    Availability In Stock – Same-Day Shipping
    Condition New OEM

    Key Features of the MG75Q1JS40:

    • 600V collector-emitter breakdown voltage (VCES) providing robust margin for 400VAC line-side applications
    • 75A continuous collector current rating supporting mid-range industrial drive and inverter output stages
    • Low saturation voltage (VCE(sat)) design reducing conduction losses and thermal load at full current
    • Integrated freewheeling diodes optimized for fast recovery, minimizing reverse recovery losses during high-frequency commutation
    • Isolated baseplate construction enabling direct mounting to heatsinks without additional insulation hardware, simplifying thermal management
    • Compatible with standard IGBT gate drive voltages (+15V / -8V to -15V), easing drop-in integration with existing drive circuits

    With a factory lead time of 99 weeks for new production, the MG75Q1JS40 presents a serious procurement challenge for maintenance teams managing aging equipment or engineers mid-design cycle. This module is not an anomaly — long lead times on established IGBT packages are now the norm across the industry. Waiting on factory allocation is not a viable strategy when a single failed module can halt a production line. Sourcing from a distributor carrying verified OEM stock is the only reliable path to protecting uptime and keeping project schedules intact.

    ATI Accurate Technology is a power semiconductor distributor based in Palmetto, Florida, stocking IGBTs, thyristors, diodes, and rectifier modules including hard-to-find and long-lead-time parts like the MG75Q1JS40. Orders placed before 5PM EST ship same day. Volume pricing is available for MRO and OEM procurement. Contact ATI at 239-734-7566 or sales@igbts.us to confirm availability and request a quote.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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** 1 Year Warranty on All Products **
In Stock: 6
  • 6
  • 27 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $176.00 USD
Regular price Sale price $176.00 USD
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