MG50N2YS1-TOSHIBA
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  • MG50N2YS1-TOSHIBA
  • MG50N2YS1
  • TOSHIBA
  • Toshiba Power Semiconductor
  • Data Sheet for MG50N2YS1
  • Description

    The Toshiba MG50N2YS1 is a high-performance IGBT module rated at 50 amperes and 1200 volts, engineered for efficiency and reliability in industrial power conversion systems. Featuring a low collector-emitter saturation voltage and integrated freewheeling diode, this module minimizes switching losses and simplifies circuit design. Its robust isolation and thermally optimized baseplate construction support demanding duty cycles in high-frequency inverter stages, making it a dependable solution for engineers requiring consistent electrical performance under variable load and thermal stress conditions.

    The MG50N2YS1 is well-suited for a broad range of industrial applications including AC motor drives, servo amplifiers, uninterruptible power supplies (UPS), induction heating systems, and general-purpose PWM inverters. Its 1200V blocking voltage and 50A continuous current rating make it a practical choice for medium-power industrial drives operating from three-phase mains. The module's standardized footprint supports straightforward integration into existing designs and replacement of legacy assemblies, reducing engineering overhead during maintenance or system upgrades in manufacturing, HVAC, and process control environments.

    Quick Reference: MG50N2YS1

    Part Number MG50N2YS1
    Manufacturer Toshiba
    Type IGBT Module
    Current Rating 50A
    Voltage Rating 1200V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the MG50N2YS1:

    • 1200V collector-emitter voltage (VCES) for robust margin in mains-referenced inverter topologies
    • 50A continuous collector current (IC) with high pulse current capability for demanding load transients
    • Low VCE(sat) reduces conduction losses and overall system heat dissipation at rated current
    • Integrated co-packaged freewheeling diode eliminates external diode selection and simplifies gate drive circuitry
    • High isolation voltage baseplate construction supports direct heatsink mounting with standard thermal interface materials
    • Optimized for PWM switching frequencies common in industrial motor drives and inverter applications

    With a factory lead time of 99 weeks for new production, the MG50N2YS1 presents a serious procurement challenge for maintenance teams managing unplanned equipment failures or for OEMs scaling production. Toshiba's legacy IGBT module lines frequently fall into allocation or are discontinued outright, leaving engineers scrambling for qualified replacements. ATI Accurate Technology maintains inventory of hard-to-find and long-lead-time power semiconductors precisely for these situations — providing access to genuine OEM parts without the months-long wait associated with factory orders or the risk inherent in unverified aftermarket sources.

    ATI Accurate Technology is headquartered in Palmetto, Florida, and specializes in power semiconductors including IGBTs, thyristors, diodes, and rectifier modules. Orders placed before 5PM EST ship same day. Whether you need a single module for emergency maintenance or volume quantities for a production run, ATI offers competitive pricing and responsive support. Contact our team directly at 239-734-7566 or sales@igbts.us for availability confirmation, volume pricing, and lead time details on the MG50N2YS1 and related Toshiba power modules.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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In Stock: 3
  • 3
  • 27 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $137.70 USD
Regular price Sale price $137.70 USD
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