MG25Q6ES50A-TOSHIBA
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  • MG25Q6ES50A-TOSHIBA
  • MG25Q6ES50A
  • TOSHIBA
  • Toshiba Power Semiconductor
  • Data Sheet for MG25Q6ES50A
  • Description

    The Toshiba MG25Q6ES50A is a discrete IGBT module designed for demanding power conversion applications requiring reliable, low-loss switching performance. Built to Toshiba's established MG-series construction standards, this module delivers consistent gate characteristics and thermal stability in compact package formats. Engineers specifying parts for variable frequency drives, inverter stages, and regenerative braking circuits will recognize the MG25Q6ES50A as a proven solution where ruggedness and switching efficiency are non-negotiable. Its current rating and voltage class make it suitable for a wide range of industrial and commercial power electronics platforms.

    The MG25Q6ES50A sees broad deployment across industrial motor drives, induction heating equipment, welding inverters, elevator drives, and mid-range UPS systems. Its switching characteristics support both hard-switching and soft-switching topologies, making it adaptable to legacy equipment designs as well as engineered retrofit solutions. OEM equipment manufacturers and MRO teams servicing Fanuc, Yaskawa, Mitsubishi, and similar platforms frequently encounter this Toshiba module as a direct replacement component in established drive and servo amplifier assemblies where form-factor compatibility is essential.

    Quick Reference: MG25Q6ES50A

    Part Number MG25Q6ES50A
    Manufacturer Toshiba
    Type IGBT Module
    Current Rating 25A
    Voltage Rating 600V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the MG25Q6ES50A:

    • 25A continuous collector current rating with 600V CE voltage class for industrial inverter compatibility
    • Low saturation voltage (VCE(sat)) reduces conduction losses and thermal stress at rated load
    • Integrated freewheeling diode optimized for fast recovery, minimizing reverse recovery losses in PWM switching stages
    • Isolated baseplate construction supports direct heatsink mounting and simplifies thermal management in dense drive assemblies
    • Gate drive compatibility with standard IGBT driver ICs at 15V/−8V bipolar supply configurations
    • Designed to Toshiba's MG-series process for gate oxide reliability and long operational life in continuous-duty industrial environments

    With a current factory lead time of 99 weeks from Toshiba, procurement teams and MRO engineers cannot rely on new production to meet urgent equipment repair or build schedules. The MG25Q6ES50A has been in service long enough that field replacements, line-down situations, and legacy equipment refurbishments create consistent demand well ahead of what standard supply chains can support. Sourcing from a stocking distributor with verified new OEM inventory is the practical path to avoiding extended equipment downtime or costly production delays tied to an extended factory queue.

    ATI Accurate Technology is a power semiconductor distributor headquartered in Palmetto, Florida, specializing in IGBTs, thyristors, diodes, and rectifier modules — including hard-to-find, long-lead-time, and obsolete parts. The MG25Q6ES50A ships same day on orders received before 5PM EST. Contact our team for volume pricing, cross-reference support, or expedite requests. Call 239-734-7566 or email sales@igbts.us.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
SAME DAY SHIPPING FOR ORDERS PLACED BY 5PM EST ON ALL STOCK ITEMS

** 1 Year Warranty on All Products **
In Stock: 1
  • 1
  • 21 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $265.20 USD
Regular price Sale price $265.20 USD
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