MG200Q2YS50-TOSHIBA
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  • MG200Q2YS50-TOSHIBA
  • MG200Q2YS50
  • TOSHIBA
  • Toshiba Power Semiconductor
  • Data Sheet for MG200Q2YS50
  • Description

    The Toshiba MG200Q2YS50 is a high-power IGBT module rated for 200A continuous collector current and a 2500V collector-emitter voltage, placing it firmly in the upper tier of industrial power semiconductor devices. Built for reliability under sustained high-voltage switching stress, this module integrates insulated gate bipolar transistor technology with a freewheeling diode in a rugged, isolated baseplate package. Its combination of low saturation voltage and fast switching characteristics makes it well suited for high-efficiency power conversion at elevated bus voltages encountered in heavy industrial and rail-traction environments.

    The MG200Q2YS50 sees widespread use in medium-voltage AC motor drives, regenerative inverters, railway traction converters, high-power UPS systems, and industrial welding equipment. Anywhere a design demands reliable switching at 2500V with 200A load capacity, this module is a proven solution. Its thermal and electrical characteristics are compatible with forced-air and liquid-cooled heatsink assemblies, making it adaptable across a broad range of system architectures in steel mills, mining operations, transit systems, and large-scale renewable energy infrastructure.

    Quick Reference: MG200Q2YS50

    Part Number MG200Q2YS50
    Manufacturer Toshiba
    Type IGBT Module
    Collector Current (IC) 200A
    Collector-Emitter Voltage (VCES) 2500V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the MG200Q2YS50:

    • 2500V VCES rating provides substantial voltage margin for medium-voltage DC bus applications and transient overvoltage protection headroom
    • 200A continuous collector current rating supports high-power drive and inverter topologies without parallel module configurations in many designs
    • Integrated freewheeling diode eliminates external diode selection and reduces PCB or busbar complexity in inverter legs
    • Low VCE(sat) minimizes conduction losses, improving overall system efficiency in continuous-duty industrial cycles
    • Isolated copper baseplate construction enables direct mounting to standard heatsink assemblies with controlled clamping torque for optimized thermal interface
    • Gate drive compatible with standard IGBT driver ICs operating in the 15V/−8V to 15V/−15V range, simplifying retrofit and new design integration

    With a factory lead time of 99 weeks on new production orders, the MG200Q2YS50 presents a serious procurement challenge for maintenance teams managing unplanned equipment failures or engineers building systems on accelerated schedules. Toshiba's high-voltage IGBT modules in this class are not commodity items — distribution channel inventory is limited and often exhausted quickly. Sourcing from a stocking distributor with verified OEM inventory is the only practical path to avoiding extended downtime or project delays when factory lead times stretch beyond two years.

    ATI Accurate Technology in Palmetto, Florida stocks the MG200Q2YS50 in new OEM condition and ships same-day on orders received before 5PM EST. Whether you need a single replacement module or volume quantities for a larger procurement, ATI can support your schedule. Contact our team for real-time availability, datasheet support, and volume pricing. Call 239-734-7566 or email sales@igbts.us today.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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** 1 Year Warranty on All Products **
In Stock: 12
  • 12
  • 30 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $153.00 USD
Regular price Sale price $153.00 USD
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