Name: MG200Q2YS11-TOSHIBA
Brand: TOSHIBA
SKU: MG200Q2YS11-TOSHIBA
Price: 283.50 USD
Availability: InStock

{"id":4328868020275,"title":"MG200Q2YS11-TOSHIBA","handle":"mg200q2ys11-toshiba","description":"\u003cp\u003eThe Toshiba MG200Q2YS11 is a high-performance 1200V, 200A IGBT power module engineered for rugged, high-frequency switching in industrial power conversion systems. Built to Toshiba's established Q-series design standards, this module integrates fast-switching IGBT chips with a co-packaged freewheeling diode in a robust isolated base package. Its low saturation voltage (V\u003csub\u003eCE(sat)\u003c\/sub\u003e) and optimized gate characteristics make it well suited for applications where efficiency, thermal performance, and switching precision are non-negotiable requirements. Engineers specifying this device benefit from predictable switching behavior across a wide operating temperature range.\u003c\/p\u003e\u003cp\u003eThe MG200Q2YS11 is widely deployed in AC motor drives, servo amplifiers, uninterruptible power supplies (UPS), induction heating systems, and industrial welding inverters. Its 1200V blocking voltage and 200A continuous collector current rating provide ample headroom for medium-voltage drive topologies operating from 480V to 690V AC bus systems. Renewable energy inverters, elevator drives, and crane hoist controls are additional platforms where this module's combination of current density, switching speed, and isolation voltage deliver reliable long-term operation under high-cycle-count conditions.\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eQuick Reference: MG200Q2YS11\u003c\/strong\u003e\u003c\/p\u003e\u003ctable\u003e\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003ePart Number\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003eMG200Q2YS11\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003eManufacturer\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003eToshiba\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003eType\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003eIGBT Power Module\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003eCollector Current (I\u003csub\u003eC\u003c\/sub\u003e)\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003e200A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003eVoltage (V\u003csub\u003eCES\u003c\/sub\u003e)\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003e1200V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003eAvailability\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003eIn Stock — Same-Day Shipping\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003eCondition\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003eNew OEM\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\u003c\/table\u003e\u003cp\u003e\u003cstrong\u003eKey Features of the MG200Q2YS11:\u003c\/strong\u003e\u003c\/p\u003e\u003cul\u003e\n\u003cli\u003e1200V collector-emitter breakdown voltage (V\u003csub\u003eCES\u003c\/sub\u003e) with 200A continuous collector current rating for medium-voltage drive topologies\u003c\/li\u003e\n\u003cli\u003eIntegrated anti-parallel freewheeling diode eliminates external diode selection and simplifies PCB or busbar layout\u003c\/li\u003e\n\u003cli\u003eLow V\u003csub\u003eCE(sat)\u003c\/sub\u003e minimizes conduction losses and reduces heatsink thermal requirements at full load\u003c\/li\u003e\n\u003cli\u003eIsolated copper base plate construction supports direct mounting to standard heatsink profiles with industry-standard footprint compatibility\u003c\/li\u003e\n\u003cli\u003eOptimized gate charge characteristics enable clean switching transitions with minimal EMI generation at switching frequencies typical of industrial inverter designs\u003c\/li\u003e\n\u003cli\u003eDesigned for compatibility with standard IGBT gate driver ICs operating at ±15V gate drive voltage\u003c\/li\u003e\n\u003c\/ul\u003e\u003cp\u003eWith a current factory lead time of 99 weeks, the MG200Q2YS11 presents a serious procurement challenge for OEMs managing production schedules and MRO teams supporting installed equipment. Toshiba's Q-series modules are not commonly stocked by broadline distributors, and direct factory orders at this lead time are impractical for urgent maintenance or retrofit projects. ATI Accurate Technology maintains inventory of hard-to-find and long-lead-time power semiconductors specifically to bridge this gap, providing procurement professionals and engineers with immediate access to genuine OEM parts when the factory cannot deliver on acceptable timelines.\u003c\/p\u003e\u003cp\u003eATI Accurate Technology is a power semiconductor specialist headquartered in Palmetto, Florida, stocking IGBTs, thyristors, diodes, and rectifier modules for immediate shipment. Orders placed before 5PM EST ship same day. 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Built to Toshiba's established Q-series design standards, this module integrates fast-switching IGBT chips with a co-packaged freewheeling diode in a robust isolated base package. Its low saturation voltage (V\u003csub\u003eCE(sat)\u003c\/sub\u003e) and optimized gate characteristics make it well suited for applications where efficiency, thermal performance, and switching precision are non-negotiable requirements. Engineers specifying this device benefit from predictable switching behavior across a wide operating temperature range.\u003c\/p\u003e\u003cp\u003eThe MG200Q2YS11 is widely deployed in AC motor drives, servo amplifiers, uninterruptible power supplies (UPS), induction heating systems, and industrial welding inverters. Its 1200V blocking voltage and 200A continuous collector current rating provide ample headroom for medium-voltage drive topologies operating from 480V to 690V AC bus systems. Renewable energy inverters, elevator drives, and crane hoist controls are additional platforms where this module's combination of current density, switching speed, and isolation voltage deliver reliable long-term operation under high-cycle-count conditions.\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eQuick Reference: MG200Q2YS11\u003c\/strong\u003e\u003c\/p\u003e\u003ctable\u003e\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003ePart Number\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003eMG200Q2YS11\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003eManufacturer\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003eToshiba\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003eType\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003eIGBT Power Module\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003eCollector Current (I\u003csub\u003eC\u003c\/sub\u003e)\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003e200A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003eVoltage (V\u003csub\u003eCES\u003c\/sub\u003e)\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003e1200V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003eAvailability\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003eIn Stock — Same-Day Shipping\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\u003cstrong\u003eCondition\u003c\/strong\u003e\u003c\/td\u003e\n\u003ctd\u003eNew OEM\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\u003c\/table\u003e\u003cp\u003e\u003cstrong\u003eKey Features of the MG200Q2YS11:\u003c\/strong\u003e\u003c\/p\u003e\u003cul\u003e\n\u003cli\u003e1200V collector-emitter breakdown voltage (V\u003csub\u003eCES\u003c\/sub\u003e) with 200A continuous collector current rating for medium-voltage drive topologies\u003c\/li\u003e\n\u003cli\u003eIntegrated anti-parallel freewheeling diode eliminates external diode selection and simplifies PCB or busbar layout\u003c\/li\u003e\n\u003cli\u003eLow V\u003csub\u003eCE(sat)\u003c\/sub\u003e minimizes conduction losses and reduces heatsink thermal requirements at full load\u003c\/li\u003e\n\u003cli\u003eIsolated copper base plate construction supports direct mounting to standard heatsink profiles with industry-standard footprint compatibility\u003c\/li\u003e\n\u003cli\u003eOptimized gate charge characteristics enable clean switching transitions with minimal EMI generation at switching frequencies typical of industrial inverter designs\u003c\/li\u003e\n\u003cli\u003eDesigned for compatibility with standard IGBT gate driver ICs operating at ±15V gate drive voltage\u003c\/li\u003e\n\u003c\/ul\u003e\u003cp\u003eWith a current factory lead time of 99 weeks, the MG200Q2YS11 presents a serious procurement challenge for OEMs managing production schedules and MRO teams supporting installed equipment. Toshiba's Q-series modules are not commonly stocked by broadline distributors, and direct factory orders at this lead time are impractical for urgent maintenance or retrofit projects. ATI Accurate Technology maintains inventory of hard-to-find and long-lead-time power semiconductors specifically to bridge this gap, providing procurement professionals and engineers with immediate access to genuine OEM parts when the factory cannot deliver on acceptable timelines.\u003c\/p\u003e\u003cp\u003eATI Accurate Technology is a power semiconductor specialist headquartered in Palmetto, Florida, stocking IGBTs, thyristors, diodes, and rectifier modules for immediate shipment. Orders placed before 5PM EST ship same day. Contact our team for volume pricing, cross-reference assistance, or application support at \u003cstrong\u003e239-734-7566\u003c\/strong\u003e or \u003cstrong\u003esales@igbts.us\u003c\/strong\u003e.\u003c\/p\u003e"}

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Part Number	MG200Q2YS11
Manufacturer	Toshiba
Type	IGBT Power Module
Collector Current (I_C)	200A
Voltage (V_CES)	1200V
Availability	In Stock — Same-Day Shipping
Condition	New OEM