MG100J6ES50-TOSHIBA
Skip to product information
1 of 1
  • MG100J6ES50-TOSHIBA
  • MG100J6ES50
  • TOSHIBA
  • Toshiba Power Semiconductor
  • Data Sheet for MG100J6ES50
  • Description

    The Toshiba MG100J6ES50 is a sixth-generation IGBT module rated at 100A and 1200V, engineered for demanding power conversion applications where switching efficiency and thermal stability are non-negotiable. Built on Toshiba's mature 6th-gen IGBT process, this module delivers low saturation voltage (VCE(sat)), fast switching characteristics, and a robust isolated baseplate construction suited for reliable long-term operation in high-cycle environments. It is a direct fit for engineers maintaining or upgrading industrial inverter platforms originally specified around this device family.

    The MG100J6ES50 sees widespread deployment across industrial AC motor drives, servo amplifiers, elevator traction inverters, induction heating systems, and three-phase UPS installations. Its 1200V blocking voltage and 100A continuous current rating place it squarely in the medium-power range where reliability and parts availability directly affect production uptime. OEMs and maintenance teams working on legacy drive platforms frequently encounter this module as a critical replacement component when field failures occur unexpectedly.

    Quick Reference: MG100J6ES50

    Part Number MG100J6ES50
    Manufacturer Toshiba
    Type IGBT Power Module
    Collector Current (IC) 100A
    Collector-Emitter Voltage (VCES) 1200V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the MG100J6ES50:

    • 1200V VCES rating provides robust voltage margin for line-side transient protection in 480V–690V drive applications
    • 100A continuous collector current supports medium-power inverter and converter topologies without derating concerns at rated ambient
    • Sixth-generation Toshiba IGBT cell structure optimized for low VCE(sat), reducing conduction losses across the load cycle
    • Integrated freewheeling diodes with soft-recovery characteristics minimize EMI and voltage overshoot during commutation
    • Isolated copper baseplate construction enables direct mounting to heatsink assemblies with standard thermal interface materials
    • Compatible footprint and pinout with established Toshiba 6ES-series module platforms, simplifying drop-in replacement on legacy equipment

    Toshiba's published factory lead time on the MG100J6ES50 currently stands at 99 weeks — nearly two years from order placement to delivery on new production. For maintenance engineers dealing with an unplanned field failure or procurement teams managing MRO inventory, that timeline is operationally unacceptable. The MG100J6ES50 also appears on obsolescence watch lists as Toshiba continues consolidating legacy module product lines. Securing verified in-stock inventory from a specialized distributor is the only reliable path to keeping critical equipment running without extended downtime.

    ATI Accurate Technology in Palmetto, Florida stocks the MG100J6ES50 and ships same-day on orders placed before 5PM EST. We specialize in hard-to-find, long-lead-time, and obsolete power semiconductors — IGBTs, thyristors, diodes, and rectifier modules. Volume pricing is available for MRO stocking orders. Contact our team directly at 239-734-7566 or sales@igbts.us to confirm availability and get a quote today.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
SAME DAY SHIPPING FOR ORDERS PLACED BY 5PM EST ON ALL STOCK ITEMS

** 1 Year Warranty on All Products **
In Stock: 3
  • 3
  • 18 (Can ship in We can ship in 7-10 Days)
  • 99Weeks
Regular price $229.50 USD
Regular price Sale price $229.50 USD
Sale Sold out
Shipping calculated at checkout.
Quantity
View full details