IXFR55N50-IXYS
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  • IXFR55N50-IXYS
  • IXFR55N50
  • IXYS
  • Ixys Thyristor Module
  • Data Sheet for IXFR55N50
  • Description

    The IXFR55N50 is an IXYS N-Channel enhancement-mode power MOSFET delivering 55A continuous drain current and a 500V VDSS rating. Designed for demanding power conversion environments, this device combines low RDS(on) with fast intrinsic body diode recovery, making it effective in hard-switched and resonant topologies alike. The isolated tab TO-262 style package simplifies thermal management in high-density assemblies, allowing direct mounting to a heatsink without additional insulating hardware and reducing overall system complexity.

    The IXFR55N50 sees broad deployment across industrial and commercial power electronics. Typical applications include three-phase and single-phase motor drive inverters, synchronous and interleaved DC-DC converters, uninterruptible power supplies (UPS), industrial welding equipment, solar inverters, and battery charging systems. Its combination of voltage headroom and current capability also supports use in traction converters and power factor correction stages where reliable switching performance under load transients is essential to system uptime and efficiency.

    Quick Reference: IXFR55N50

    Part Number IXFR55N50
    Manufacturer IXYS
    Type N-Channel Enhancement-Mode Power MOSFET
    Continuous Drain Current (ID) 55A
    Drain-Source Voltage (VDSS) 500V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the IXFR55N50:

    • 500V VDSS rating provides robust voltage margin for 240VAC and 380VAC bus applications with transient protection headroom
    • 55A continuous drain current with low RDS(on) reduces conduction losses and minimizes heatsink requirements in thermally constrained designs
    • Fast intrinsic body diode with low reverse recovery charge (Qrr) supports synchronous rectification and freewheeling applications without external anti-parallel diodes
    • Isolated tab package eliminates the need for mica or ceramic insulating pads, streamlining assembly and improving thermal interface consistency
    • Low gate charge (Qg) enables efficient high-frequency switching in resonant and PWM converters, reducing gate driver power dissipation
    • Avalanche-rated construction (unclamped inductive switching) provides added resilience against voltage spikes in inductive load environments

    With a 42-week factory lead time on new production orders, procurement teams relying solely on the manufacturer pipeline risk extended system downtime and project delays. The IXFR55N50 has also reached end-of-life status with some distributors, compounding availability challenges for OEM service and legacy system maintenance. ATI Accurate Technology maintains stock of hard-to-find IXYS power semiconductors precisely to support engineers and buyers who cannot afford to wait on long-lead or obsolete components. Our inventory is sourced from verified supply chains and sold in new, original OEM condition.

    ATI Accurate Technology is located in Palmetto, Florida and specializes in power semiconductors including IGBTs, MOSFETs, thyristors, diodes, and rectifier modules. Orders placed before 5PM EST ship same day. Contact our team for real-time stock confirmation, datasheets, and volume pricing on the IXFR55N50. Call 239-734-7566 or email sales@igbts.us — we respond fast and stock what others don't.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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** 1 Year Warranty on All Products **
In Stock: 15
  • 15
  • 12 (Can ship in We can ship in 7-10 Days)
  • 42 Weeks
Regular price $18.00 USD
Regular price Sale price $18.00 USD
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