FZ1200R12KE3-INFINEON
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  • FZ1200R12KE3-INFINEON
  • FZ1200R12KE3
  • INFINEON
  • Infineon IGBT Module
  • Data Sheet for FZ1200R12KE3
  • Description

    The Infineon FZ1200R12KE3 is a high-current, high-voltage IGBT module rated at 1200A collector current and 1200V blocking voltage. Utilizing Infineon's third-generation IGBT chip technology, this module is engineered for low VCE(sat) and controlled switching behavior, making it a go-to choice for engineers designing or maintaining large-scale power conversion systems. The robust press-pack-style base construction and optimized thermal interface support demanding duty cycles in industrial and utility-scale environments where reliability and thermal management are non-negotiable.

    The FZ1200R12KE3 is widely deployed in medium-voltage drives, traction inverters, industrial UPS systems, induction heating equipment, and grid-tied renewable energy converters including wind turbine inverters and large solar string inverters. Its high current rating makes it especially suitable for multi-megawatt drive systems and regenerative braking applications where both switching efficiency and rugged overcurrent tolerance are critical. OEMs and MRO teams across steel, mining, marine propulsion, and rail industries rely on this module as a core switching element in legacy and active platform designs.

    Quick Reference: FZ1200R12KE3

    Part Number FZ1200R12KE3
    Manufacturer Infineon Technologies
    Type IGBT Module
    Collector Current (IC) 1200A
    Collector-Emitter Voltage (VCES) 1200V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the FZ1200R12KE3:

    • 1200V VCES blocking voltage with 1200A rated continuous collector current for high-power converter stages
    • Infineon IGBT3 trench/field-stop chip technology delivering low VCE(sat) and reduced conduction losses at full load
    • Integrated anti-parallel emitter-controlled diode optimized for soft-recovery switching and minimized reverse recovery losses
    • Low thermal resistance junction-to-case (Rth(j-c)) enabling high power density and effective heat dissipation through standard heatsink mounting
    • Industry-standard 190mm × 140mm footprint compatible with Infineon and equivalent third-party gate driver and mounting hardware
    • Isolated copper baseplate construction rated for high-repetitive peak currents, suitable for both hard-switching and resonant converter topologies

    With a published factory lead time of 99 weeks, the FZ1200R12KE3 presents a serious supply chain challenge for maintenance teams facing unplanned downtime or for procurement professionals building buffer stock. New production orders placed today won't arrive for nearly two years — a critical vulnerability for any facility running equipment dependent on this module. ATI specializes in exactly this scenario, maintaining ready inventory of long-lead-time and allocation-constrained Infineon IGBT modules so your operation doesn't stall waiting on a factory queue.

    ATI Accurate Technology is a power semiconductor distributor based in Palmetto, Florida, stocking IGBTs, thyristors, diodes, and rectifier modules including obsolete and hard-to-find parts. The FZ1200R12KE3 ships same day on orders received before 5PM EST. Volume pricing is available for MRO stocking orders and OEM builds. Contact our team today at 239-734-7566 or sales@igbts.us to confirm availability and lead time.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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** 1 Year Warranty on All Products **
In Stock: 1
  • 1
  • 6 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $773.00 USD
Regular price Sale price $773.00 USD
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