FT150R12KE3G_B4-INFINEON
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  • FT150R12KE3G_B4-INFINEON
  • FT150R12KE3G_B4
  • INFINEON
  • Mitsubishi Power Semiconductor Module
  • Description

    The FT150R12KE3G_B4-INFINEON is an Infineon-manufactured IGBT power semiconductor module rated for 150A collector current and 1200V blocking voltage. Built on Infineon's proven trench-gate IGBT cell technology, this module delivers low VCE(sat) and reduced switching losses, making it well-suited for high-efficiency power conversion designs. The B4 configuration designates a specific variant optimized for gate drive compatibility and thermal interface within Infineon's FT-series platform, offering engineers a reliable drop-in solution for both new designs and field replacements.

    This module finds broad use across industrial and commercial power electronics platforms. Typical applications include AC motor drives and variable frequency drives (VFDs), industrial inverters, regenerative braking systems, medium-power UPS and energy storage converters, welding equipment, and induction heating systems. Its 1200V voltage class covers the majority of three-phase 480V and 690V drive topologies, while the 150A current rating suits mid-range power stages where thermal management and switching performance are equally critical.

    Quick Reference: FT150R12KE3G_B4-INFINEON

    Part Number FT150R12KE3G_B4-INFINEON
    Manufacturer Infineon Technologies
    Type IGBT Power Semiconductor Module
    Continuous Collector Current (IC) 150A
    Collector-Emitter Voltage (VCES) 1200V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the FT150R12KE3G_B4-INFINEON:

    • 1200V VCES and 150A IC rating supports mid-range industrial inverter and drive topologies on 480V and 690V three-phase systems
    • Infineon trench-gate IGBT cell structure delivers low saturation voltage (VCE(sat)) and minimized conduction losses for high-efficiency operation
    • Optimized switching characteristics reduce turn-on and turn-off energy losses, supporting higher switching frequencies with controlled dv/dt
    • Integrated freewheeling diodes with soft-recovery characteristics reduce voltage overshoot and EMI in bridge converter configurations
    • B4 variant designation ensures compatibility with Infineon's standard gate drive reference designs and EiceDRIVER gate driver ICs
    • Industry-standard module footprint and baseplate design simplifies heatsink mounting and enables straightforward like-for-like field replacement

    Infineon IGBT modules in the FT-series are subject to extended lead times and periodic allocation constraints through standard distribution channels, particularly for specific variants such as the B4 configuration. OEM production lines and field service teams often encounter gaps between demand and availability, especially when managing aging equipment or supporting platforms that have moved beyond active production. Stocking through a specialist distributor mitigates downtime risk and procurement delays that are common with broadline channels during supply tightening cycles.

    ATI Accurate Technology, based in Palmetto, Florida, maintains ready inventory of the FT150R12KE3G_B4-INFINEON and ships same day on orders placed before 5PM EST. We specialize in IGBTs, thyristors, diodes, and rectifier modules — including hard-to-find and obsolete parts. Contact our team for volume pricing, technical cross-reference assistance, or urgent fulfillment needs. Call 239-734-7566 or email sales@igbts.us.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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In Stock: 2
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Regular price $979.00 USD
Regular price Sale price $979.00 USD
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