FF200R12KE3-INFINEON
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  • FF200R12KE3-INFINEON
  • FF200R12KE3
  • INFINEON
  • Fuji Power Semiconductor Module — 500V
  • Data Sheet for FF200R12KE3
  • Description

    The Infineon FF200R12KE3 is a 200A, 1200V IGBT module from Infineon's IGBT3 generation, housed in a standard 62mm package configuration. It integrates reverse-conducting freewheeling diodes and is optimized for low conduction and switching losses, making it well suited for high-frequency, high-power conversion circuits. The module's rugged construction and well-characterized thermal performance support demanding duty cycles, and its industry-standard footprint simplifies drop-in replacement in existing designs or field repairs requiring a direct substitute.

    The FF200R12KE3 sees broad deployment across industrial motor drives, regenerative braking systems, UPS and energy storage inverters, induction heating equipment, and mid-to-large-scale solar and wind power converters. Wherever a 1200V-class, three-phase or single-phase inverter leg demands robust, thermally stable switching at currents up to 200A continuous, this module is a proven fit. Its adoption across multiple OEM platforms — from pump and compressor drives to traction auxiliaries — means procurement and maintenance teams frequently need reliable access to verified stock.

    Quick Reference: FF200R12KE3

    Part Number FF200R12KE3
    Manufacturer Infineon Technologies
    Type IGBT Module
    Collector Current (IC) 200A
    Collector-Emitter Voltage (VCES) 1200V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the FF200R12KE3:

    • 1200V VCES and 200A IC continuous collector current rating for high-power inverter stages
    • Infineon IGBT3 chip technology delivering optimized trade-off between conduction loss (VCEsat) and switching energy (Eon/Eoff)
    • Integrated fast-recovery freewheeling diodes with low reverse-recovery charge (Qrr) reducing EMI and switching stress
    • Standard 62mm module footprint with isolated AlSiC or direct copper bonded baseplate for reliable thermal interface to heatsink
    • Low thermal resistance junction-to-case (RthJC) supporting high power density designs and extended thermal cycling reliability
    • Gate drive compatible with standard 15V/-8V bipolar supply, simplifying integration with common IGBT gate driver ICs

    With a current factory lead time of 99 weeks on new production, the FF200R12KE3 represents exactly the kind of long-lead, high-demand component that can halt a production line or delay a critical repair. Procurement teams managing MRO inventory or engineers sourcing replacements for aging drives cannot afford to wait nearly two years for factory allocation. Whether you're purchasing for immediate repair, building safety stock, or qualifying an alternate supply chain, securing verified new OEM units from a stocking distributor is the practical path forward.

    ATI Accurate Technology, based in Palmetto, FL, stocks the FF200R12KE3 as new OEM and ships same day on orders received before 5PM EST. We specialize in hard-to-find, long-lead, and obsolete power semiconductors — IGBTs, thyristors, diodes, and rectifier modules. Volume pricing is available. Contact our team directly at 239-734-7566 or sales@igbts.us to confirm availability, request a quote, or discuss your project requirements.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
SAME DAY SHIPPING FOR ORDERS PLACED BY 5PM EST ON ALL STOCK ITEMS

** 1 Year Warranty on All Products **
In Stock: 4
  • 4
  • 9 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $198.90 USD
Regular price Sale price $198.90 USD
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