FD200R12KE3-INFINEON
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  • FD200R12KE3-INFINEON
  • FD200R12KE3
  • INFINEON
  • Fuji Power Semiconductor Module — 500V
  • Data Sheet for FD200R12KE3
  • Description

    The Infineon FD200R12KE3 is a high-performance 1200V / 200A IGBT power semiconductor module built on Infineon's proven trench and fieldstop IGBT technology. Engineered for efficiency under high-frequency switching conditions, this module integrates an optimized freewheeling diode and offers low saturation voltage (VCE(sat)) characteristics that reduce conduction losses in demanding power conversion stages. Its robust package construction and Al2O3 DCB substrate provide excellent thermal cycling capability and reliable insulation, making it a trusted choice for high-power industrial and energy applications.

    The FD200R12KE3 is widely deployed in AC motor drives, industrial servo systems, regenerative frequency converters, UPS systems, and medium-voltage inverters. Its 1200V blocking voltage and 200A continuous current rating make it suitable for three-phase bridge configurations in both 400V and 690V AC bus systems. Wind power converters, solar inverters, induction heating equipment, and traction auxiliary supplies also leverage this module's thermal and switching performance to maintain efficiency across wide load ranges and ambient temperature conditions.

    Quick Reference: FD200R12KE3

    Part Number FD200R12KE3
    Manufacturer Infineon Technologies
    Type IGBT Power Semiconductor Module
    Collector Current (IC) 200A
    Collector-Emitter Voltage (VCES) 1200V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the FD200R12KE3:

    • 1200V collector-emitter breakdown voltage (VCES) with 200A rated collector current for high-power three-phase inverter stages
    • Infineon Trench and Fieldstop IGBT cell technology delivering low VCE(sat) and reduced switching losses at elevated frequencies
    • Integrated optimized freewheeling diodes with soft recovery characteristics, minimizing voltage overshoot and EMI in hard-switching topologies
    • Al2O3 DCB (Direct Copper Bonded) ceramic substrate providing high thermal conductivity and dielectric isolation up to 2500VRMS
    • Industry-standard module footprint compatible with common heatsink and busbar configurations used in industrial drive platforms
    • Operating junction temperature range up to 150°C (Tj(max)), supporting high thermal load and continuous duty cycle applications

    With a confirmed factory lead time of 99 weeks for new production, the FD200R12KE3 presents a significant procurement risk for OEM production lines and MRO maintenance programs alike. Engineers managing aging drive platforms or converter systems that depend on this module cannot afford to wait nearly two years for factory fulfillment. Purchasing from a stocking distributor with verified new OEM inventory is the most reliable strategy to protect uptime, meet production schedules, and avoid costly equipment modifications or line shutdowns caused by parts shortages.

    ATI Accurate Technology is a power semiconductor distributor based in Palmetto, Florida, specializing in IGBTs, thyristors, diodes, and rectifier modules — including long-lead-time and hard-to-find parts like the FD200R12KE3. We ship same-day on orders placed before 5PM EST. Contact our team for volume pricing, kitting support, or expedite requests: call 239-734-7566 or email sales@igbts.us.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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** 1 Year Warranty on All Products **
In Stock: 11
  • 11
  • 27 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $265.20 USD
Regular price Sale price $265.20 USD
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