BSM400GA120DN2FS_E3256-INFINEON
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  • BSM400GA120DN2FS_E3256-INFINEON
  • BSM400GA120DN2FS_E3256
  • INFINEON
  • Infineon Power Semiconductor Module
  • Data Sheet for BSM400GA120DN2FS_E3256
  • Description

    The Infineon BSM400GA120DN2FS_E3256 is a high-current, 1200V-class IGBT module engineered for three-phase inverter and converter topologies operating at the upper end of the industrial power range. Leveraging Infineon's DN2 trench-gate IGBT cell structure with co-packaged fast-recovery emitter-controlled freewheeling diodes, the module achieves low VCE(sat), reduced switching losses, and exceptional thermal cycling endurance. The FS-series housing provides low-inductance internal bussing and direct copper bonding (DCB) substrate construction for superior power density and reliability in continuous-duty service.

    This module is widely deployed in medium-voltage variable-frequency drives (VFDs), regenerative AC motor controllers, induction heating power supplies, UPS systems, wind and solar inverters, and rail traction converters. Its 400A continuous current rating and 1200V blocking capability make it a natural fit for multi-megawatt industrial machinery, compressor drives, crane and hoist systems, and mine winders where thermal stability and gate-drive immunity are non-negotiable. OEM machine builders and aftermarket service teams rely on this part for both new designs and field replacement of aging power stacks.

    Quick Reference: BSM400GA120DN2FS_E3256

    Part Number BSM400GA120DN2FS_E3256
    Manufacturer Infineon Technologies
    Type IGBT Module (Three-Phase Bridge)
    Collector Current (IC) 400A
    Voltage (VCES) 1200V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the BSM400GA120DN2FS_E3256:

    • 1200V collector-emitter breakdown voltage with 400A rated continuous collector current for high-power three-phase bridge configurations
    • DN2 trench-gate IGBT technology delivers low VCE(sat) for reduced conduction losses across the full operating temperature range
    • Integrated fast-recovery emitter-controlled (EC) freewheeling diodes minimize reverse-recovery charge (Qrr) and associated switching losses
    • Direct copper bonding (DCB) ceramic substrate ensures low thermal resistance junction-to-case (Rth(j-c)) and excellent power cycling capability
    • Low-inductance FS module housing with isolated baseplate supports reliable gate drive design and simplified heatsink mounting
    • Qualified for industrial and traction-grade applications with defined short-circuit withstand time (tSC) for robust protection coordination

    With a factory lead time of 99 weeks on new production orders, the BSM400GA120DN2FS_E3256 presents a critical procurement risk for maintenance teams facing unplanned failures or OEMs managing production schedules. Long-lead and allocation-constrained Infineon IGBT modules like this one routinely strand equipment and delay project completions. ATI Accurate Technology maintains independent stock of high-demand, extended-lead-time power semiconductors precisely for these situations — providing verified new OEM parts without the wait. Whether you need one module for an emergency repair or a blanket quantity for scheduled maintenance, ATI has inventory available now.

    ATI Accurate Technology is headquartered in Palmetto, Florida and ships same-day on orders received before 5PM EST. Our team specializes in IGBTs, thyristors, diodes, and rectifier modules — including obsolete and hard-to-find devices. Contact us for volume pricing, cross-reference support, or technical questions: 239-734-7566 | sales@igbts.us. We are ready to support your procurement and keep your equipment running.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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** 1 Year Warranty on All Products **
In Stock: 9
  • 9
  • 27 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $198.00 USD
Regular price Sale price $198.00 USD
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