BSM200GB120DL-INFINEON
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  • BSM200GB120DL-INFINEON
  • BSM200GB120DL
  • INFINEON
  • Infineon IGBT Module
  • Data Sheet for BSM200GB120DL
  • Description

    The Infineon BSM200GB120DL is a 200A, 1200V dual IGBT module built on Infineon's proven low-loss trench IGBT platform. This module integrates two discrete IGBT switches with freewheeling diodes in a compact, industry-standard housing, delivering low collector-emitter saturation voltage (VCE(sat)), soft switching characteristics, and reliable thermal cycling endurance. The BSM200GB120DL is engineered for continuous operation in high-power switching environments where efficiency, thermal stability, and long service life are non-negotiable design requirements.

    The BSM200GB120DL is widely deployed across industrial AC drives, servo amplifiers, UPS systems, induction heating equipment, and solar inverter platforms. Its 1200V blocking voltage and 200A continuous current rating make it well-suited for three-phase motor drive topologies and medium-voltage power conversion stages. The module's robust baseplate construction and Al₂O₃ direct copper bonding (DCB) substrate support efficient heat transfer to external heatsinks, making it a practical choice for high-cycle-count industrial machinery and renewable energy infrastructure.

    Quick Reference: BSM200GB120DL

    Part Number BSM200GB120DL
    Manufacturer Infineon Technologies
    Type Dual IGBT Module
    Continuous Collector Current (IC) 200A
    Collector-Emitter Voltage (VCES) 1200V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the BSM200GB120DL:

    • 1200V VCES and 200A IC rating supports demanding medium-power inverter and drive topologies
    • Low VCE(sat) trench IGBT cell design minimizes conduction losses across the full operating current range
    • Integrated freewheeling diodes with soft-recovery characteristics reduce switching transients and EMI generation
    • Industry-standard module footprint and terminal layout simplifies drop-in replacement in existing drive platforms
    • DCB substrate with copper baseplate ensures low thermal resistance junction-to-case (Rth(j-c)) for reliable heatsink coupling
    • Rated for operation up to Tj = 150°C, supporting high ambient temperature and high-power-density enclosure designs

    With a current factory lead time of 99 weeks on new production, sourcing the BSM200GB120DL through standard distribution channels presents a significant risk for unplanned maintenance events and production-critical procurement. Equipment downtime in industrial drive systems cannot wait two years for factory fulfillment. ATI Accurate Technology maintains inventory of hard-to-find, long-lead-time, and obsolete power semiconductors specifically to serve procurement professionals and maintenance engineers who need the right part on hand — not a promise of future delivery. Our stock is new OEM, not refurbished or pulled-from-board.

    ATI Accurate Technology is based in Palmetto, Florida and ships same-day on orders placed before 5PM EST. We specialize in IGBTs, thyristors, diodes, and rectifier modules — including parts the major distributors can no longer supply. Volume pricing is available. Contact our team directly at 239-734-7566 or sales@igbts.us to confirm availability, request a quote, or discuss application requirements.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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** 1 Year Warranty on All Products **
In Stock: 1
  • 1
  • 24 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $244.80 USD
Regular price Sale price $244.80 USD
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