BSM200GA120DN2S-INFINEON
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  • BSM200GA120DN2S-INFINEON
  • BSM200GA120DN2S
  • INFINEON
  • Semikron IGBT Module — 13A, 126V
  • Data Sheet for BSM200GA120DN2S
  • Description

    The Infineon BSM200GA120DN2S is a 200A, 1200V dual IGBT module built on Infineon's proven NPT (Non-Punch-Through) trench gate technology. Housed in the industry-standard .DN2S package, this module integrates fast-recovery freewheeling diodes and is optimized for low conduction and switching losses. Its robust thermal design, low VCE(sat), and well-characterized switching behavior make it a dependable choice for engineers specifying high-power switching stages where efficiency, reliability, and thermal headroom are non-negotiable requirements.

    The BSM200GA120DN2S is widely deployed across industrial and commercial power conversion platforms including AC motor drives, servo inverters, UPS systems, solar inverters, induction heating equipment, and traction converters. Its 1200V blocking voltage and 200A continuous current rating suit medium-voltage bus architectures common in industrial automation and renewable energy infrastructure. The .DN2S package form factor supports straightforward integration into standard power stack designs, simplifying both thermal management and mechanical assembly in high-density power electronics enclosures.

    Quick Reference: BSM200GA120DN2S

    Part Number BSM200GA120DN2S
    Manufacturer Infineon Technologies
    Type IGBT Module (Dual)
    Current Rating 200A
    Voltage Rating 1200V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the BSM200GA120DN2S:

    • 1200V collector-emitter voltage (VCEO) with 200A continuous collector current for high-power switching stages
    • Low VCE(sat) characteristic reduces on-state conduction losses, improving system efficiency across the load range
    • Integrated fast-recovery freewheeling diodes eliminate the need for external discrete diodes in bridge topologies
    • NPT trench IGBT cell structure delivers controlled tail current and predictable short-circuit behavior for improved fault ruggedness
    • .DN2S industry-standard package with isolated baseplate enables direct heatsink mounting and simplified thermal interface design
    • Characterized for both hard-switching and soft-switching converter topologies, broadening application flexibility

    With a published factory lead time of 99 weeks on new production orders, the BSM200GA120DN2S presents a serious procurement challenge for OEMs, MRO operations, and system integrators managing tight production schedules or urgent field repairs. This device has transitioned into long-lead-time and allocation status, making open-market inventory the only realistic path to near-term availability. Relying on standard distribution channels for this module will result in extended downtime or delayed production — circumstances no maintenance engineer or procurement team can afford when equipment is offline or a build schedule is at risk.

    ATI Accurate Technology stocks the BSM200GA120DN2S as new OEM product, available for same-day shipment on orders placed before 5PM EST from our Palmetto, Florida facility. We specialize in hard-to-find, long-lead-time, and obsolete power semiconductors. Volume pricing is available — contact our team directly at 239-734-7566 or sales@igbts.us to confirm availability, request a quote, or discuss blanket order options.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
SAME DAY SHIPPING FOR ORDERS PLACED BY 5PM EST ON ALL STOCK ITEMS

** 1 Year Warranty on All Products **
In Stock: 6
  • 6
  • 24 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $197.00 USD
Regular price Sale price $197.00 USD
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