BSM150GB120DN2E3256-INFINEON
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  • BSM150GB120DN2E3256-INFINEON
  • BSM150GB120DN2E3256
  • INFINEON
  • Infineon IGBT Module
  • Data Sheet for BSM150GB120DN2E3256
  • Description

    The BSM150GB120DN2E3256 is an Infineon DN2-series dual IGBT module rated for 150A continuous collector current and 1200V collector-emitter voltage. Engineered for high-frequency switching in demanding power conversion environments, this module integrates freewheeling diodes and advanced trench-gate IGBT technology to deliver low saturation voltage, tight parameter distribution, and excellent short-circuit ruggedness. Its industry-standard baseplate footprint simplifies drop-in replacement and thermal interface integration across a broad range of existing power stage designs.

    This module is widely deployed in industrial AC variable-speed drives, servo amplifiers, induction heating systems, solar and wind inverters, medium-power UPS platforms, and railway auxiliary converters. Its 1200V blocking capability and 150A current rating make it a practical choice wherever engineers need to balance switching losses against conduction losses at switching frequencies from a few kilohertz up to approximately 20 kHz. The integrated fast-recovery freewheeling diodes further reduce external component count and simplify gate driver design in three-phase bridge topologies.

    Quick Reference: BSM150GB120DN2E3256

    Part Number BSM150GB120DN2E3256
    Manufacturer Infineon Technologies
    Type IGBT Module (Dual / Half-Bridge)
    Collector Current (IC) 150A
    Collector-Emitter Voltage (VCES) 1200V
    Availability In Stock – Same-Day Shipping Available
    Condition New, OEM Genuine

    Key Features of the BSM150GB120DN2E3256:

    • 1200V VCES and 150A IC rating supports high-power three-phase inverter and converter stages
    • Infineon DN2 trench-gate IGBT cell technology delivers low VCE(sat) for reduced conduction losses at rated current
    • Integrated co-pack fast-recovery freewheeling diodes minimize reverse recovery losses and simplify PCB layout
    • Isolated copper baseplate construction enables direct heatsink mounting with standard thermal interface materials
    • Short-circuit withstand capability (tSC ≥ 10µs) provides protection margin for gate driver fault response
    • Industry-standard module footprint ensures mechanical and electrical compatibility with existing drive platforms using equivalent DN2-package IGBTs

    With a published factory lead time of 99 weeks, the BSM150GB120DN2E3256 represents exactly the kind of long-lead, hard-to-plan component that can halt production lines or delay critical equipment repairs. Infineon's IGBT modules in the 1200V/150A class are frequently caught in allocation cycles driven by renewable energy and EV infrastructure demand. Procurement teams relying solely on authorized distribution channels often face extended backlog queues with no flexibility for urgent MRO or production ramp requirements. Sourcing from a specialist stocking distributor with verified OEM inventory is the most reliable path to eliminating that exposure.

    ATI Accurate Technology stocks the BSM150GB120DN2E3256 and ships same-day on orders placed before 5PM EST from our facility in Palmetto, Florida. Whether you need a single unit for emergency maintenance or a larger quantity for production continuity, we support volume pricing and can provide documentation on request. Contact our team at 239-734-7566 or sales@igbts.us to confirm availability and request a quote today.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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** 1 Year Warranty on All Products **
In Stock: 9
  • 9
  • 30 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $188.00 USD
Regular price Sale price $188.00 USD
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