BSM10GD120DN2-INFINEON
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  • BSM10GD120DN2-INFINEON
  • BSM10GD120DN2
  • INFINEON
  • Semikron Diode Bridge Module
  • Data Sheet for BSM10GD120DN2
  • Description

    The Infineon BSM10GD120DN2 is a 10A, 1200V IGBT module built on Infineon's proven trench-gate NPT (Non-Punch-Through) IGBT technology. Housed in the DN2 footprint, this module integrates dual IGBT switches with co-packed fast-recovery freewheeling diodes, delivering low saturation voltage (VCE(sat)), controlled short-circuit behavior, and thermally efficient operation. Its design targets hard-switched and resonant converter topologies where switching losses, gate charge characteristics, and thermal impedance are all critical performance parameters for system reliability.

    The BSM10GD120DN2 is well-suited for a broad range of industrial and commercial power electronics applications. Typical deployments include variable-speed motor drives, UPS systems, solar inverters, induction heating equipment, and servo drive platforms. Its 1200V blocking voltage provides the headroom required for 690VAC line-side applications, while the compact DN2 module format simplifies PCB integration and mechanical mounting in space-constrained drive and converter chassis commonly found in automation, HVAC, and renewable energy infrastructure.

    Quick Reference: BSM10GD120DN2

    Part Number BSM10GD120DN2
    Manufacturer Infineon Technologies
    Type IGBT Module
    Collector Current (IC) 10A
    Voltage (VCES) 1200V
    Availability In Stock – Same-Day Shipping
    Condition New OEM

    Key Features of the BSM10GD120DN2:

    • 1200V collector-emitter breakdown voltage (VCES) with 10A continuous collector current rating for 690VAC bus compatibility
    • Trench-gate NPT IGBT cell structure delivering low VCE(sat) and reduced conduction losses at partial load
    • Integrated co-packed fast-recovery freewheeling diodes with soft recovery characteristics to minimize EMI and voltage overshoot
    • DN2 module package with industry-standard footprint, isolated baseplate, and screw-terminal connections for simplified system integration
    • Defined short-circuit withstand capability (tSC) enabling reliable gate driver protection in fault conditions
    • Wide operating junction temperature range (Tj up to 150°C) supporting high ambient and continuous duty applications

    With a current factory lead time of 99 weeks on new production, the BSM10GD120DN2 presents a serious procurement challenge for maintenance teams managing unplanned failures or engineers designing new systems with firm delivery commitments. Extended lead times of this magnitude are common across many 1200V IGBT module families and can halt production lines or delay project commissioning indefinitely. Sourcing from a stocking distributor with verified new OEM inventory is the only reliable path to avoiding costly downtime or schedule overruns tied to factory backlog.

    ATI Accurate Technology is a power semiconductor specialist stocking the BSM10GD120DN2 new and ready to ship from Palmetto, Florida. Orders placed before 5PM EST ship same day. Whether you need a single replacement unit or volume quantity for a capital project, ATI offers competitive pricing and responsive support. Contact our team directly at 239-734-7566 or sales@igbts.us for availability confirmation, volume pricing, and lead time quotes.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
SAME DAY SHIPPING FOR ORDERS PLACED BY 5PM EST ON ALL STOCK ITEMS

** 1 Year Warranty on All Products **
In Stock: 9
  • 9
  • 9 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $183.60 USD
Regular price Sale price $183.60 USD
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