2MBI100N-120-FUJI
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  • 2MBI100N-120-FUJI
  • 2MBI100N-120
  • FUJI
  • Fuji Power Semiconductor Module
  • Data Sheet for 2MBI100N-120
  • Description

    The Fuji Electric 2MBI100N-120 is a 1200V, 100A dual IGBT module engineered for demanding industrial power conversion applications. Built on Fuji's proven N-series IGBT platform, this module integrates two IGBT switches with freewheeling diodes in a compact, isolated baseplate package. The dual configuration supports half-bridge topologies directly, reducing external component count and simplifying PCB and busbar layout. With low saturation voltage (VCE(sat)) and fast switching characteristics, the 2MBI100N-120 delivers high efficiency across a wide load range, making it a reliable building block in variable-frequency drives, inverters, and active front-end rectifier stages.

    The 2MBI100N-120 is widely deployed in industrial AC motor drives controlling pumps, fans, compressors, and conveyors, where 1200V headroom provides adequate margin for 480V–690V bus applications. It is equally at home in medium-power UPS systems, solar inverters, induction heating equipment, and welding power supplies. Engineers specify this module where thermal reliability and switching speed must be balanced against switching losses—characteristics the N-series architecture addresses with consistency across production lots. Its standardized footprint also makes it a direct fit in legacy drive platforms that require periodic module replacement during scheduled maintenance cycles.

    Quick Reference: 2MBI100N-120

    Part Number 2MBI100N-120
    Manufacturer Fuji Electric
    Type IGBT Module – Dual (Half-Bridge)
    Collector Current (IC) 100A
    Collector-Emitter Voltage (VCES) 1200V
    Availability In Stock – Same-Day Shipping Available
    Condition New OEM

    Key Features of the 2MBI100N-120:

    • 1200V VCES rating provides robust voltage margin for 480V–690V three-phase bus systems with transient headroom
    • 100A continuous collector current supports medium-power drive and inverter stages without parallel module configurations
    • Dual IGBT configuration with integrated freewheeling diodes enables direct half-bridge implementation in a single module footprint
    • Low VCE(sat) characteristic minimizes conduction losses across typical operating current ranges, reducing heatsink thermal requirements
    • Isolated copper baseplate construction allows direct mounting to heatsinks with standard thermal interface materials, simplifying thermal management design
    • Compatible with standard Fuji N-series gate drive circuits and voltage/current specifications, easing drop-in replacement in existing drive designs

    Factory lead times for the 2MBI100N-120 currently run 99 weeks through standard distribution channels—nearly two years from order placement to delivery. For maintenance teams managing unplanned downtime or procurement teams building safety stock against drive system failures, that timeline is operationally unacceptable. ATI maintains inventory of hard-to-find and long-lead-time IGBT modules precisely for these situations. Whether you need a single replacement unit for an emergency repair or a quantity order for a scheduled overhaul or spares program, ATI can ship from verified new OEM stock without the extended wait.

    ATI Accurate Technology is a power semiconductor distributor based in Palmetto, Florida, stocking IGBTs, thyristors, diodes, and rectifier modules including obsolete and long-lead-time parts. Same-day shipping is available on orders received before 5PM EST. For pricing, lead time confirmation, or volume inquiries on the 2MBI100N-120, contact our team directly at 239-734-7566 or sales@igbts.us. Volume pricing is available for qualified orders.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
SAME DAY SHIPPING FOR ORDERS PLACED BY 5PM EST ON ALL STOCK ITEMS

** 1 Year Warranty on All Products **
In Stock: 7
  • 7
  • 24 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $191.67 USD
Regular price Sale price $191.67 USD
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