1MBI200N-120-FUJI
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  • 1MBI200N-120-FUJI
  • 1MBI200N-120
  • FUJI ELECTRIC
  • Obsolete
  • Fuji IGBT Module — 180A, 180V
  • Data Sheet for 1MBI200N-120
  • Description

    The Fuji 1MBI200N-120 is a single-configuration IGBT module delivering a 200A continuous collector current rating and 1200V collector-emitter voltage (VCES). Built on Fuji's proven N-series IGBT platform, this module integrates a high-speed freewheeling diode co-packaged with the IGBT chip, providing a compact, thermally efficient solution for demanding switching applications. Its robust construction supports high-frequency operation with low switching losses, making it well suited for precision power conversion where thermal management and efficiency are non-negotiable engineering requirements.

    The 1MBI200N-120 sees broad deployment across industrial and commercial power electronics platforms. Typical applications include AC servo and variable-frequency motor drives, three-phase PWM inverters, induction heating systems, uninterruptible power supplies (UPS), and welding power supplies. The module's 1200V blocking voltage provides the necessary headroom for 690V AC bus systems, while the 200A current rating supports mid-to-high power output stages. OEM equipment manufacturers and MRO teams maintaining legacy drive platforms rely on this module as a direct replacement in installed base machinery.

    Quick Reference: 1MBI200N-120

    Part Number 1MBI200N-120
    Manufacturer Fuji Electric
    Type IGBT Module
    Current Rating 200A
    Voltage Rating 1200V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the 1MBI200N-120:

    • 1200V VCES collector-emitter voltage with 200A continuous collector current (IC) rating
    • Integrated co-packaged freewheeling diode for simplified inverter leg design and reduced component count
    • Low saturation voltage (VCE(sat)) characteristic minimizes on-state conduction losses in high-duty-cycle applications
    • Optimized switching speed balances low turn-off energy (Eoff) with controllable dV/dt for EMI management
    • Isolated baseplate construction (Al2O3 or equivalent DCB substrate) supports direct heatsink mounting with standard thermal interface materials
    • Industry-standard module footprint ensures drop-in compatibility with existing Fuji N-series drive assemblies and PCB layouts

    The 1MBI200N-120 is classified as an obsolete component with no active production; new factory orders carry a 99-week lead time, effectively making manufacturer-direct procurement impractical for maintenance and repair scenarios. Equipment running legacy Fuji-based drive platforms cannot wait two years for a replacement module. Sourcing from a stocked distributor with verified OEM inventory is the only viable path to minimizing downtime. Counterfeit and remarked parts are a known risk in the obsolete IGBT market — working with a reputable specialist distributor mitigates that exposure and ensures you receive a traceable, genuine component.

    ATI Accurate Technology, based in Palmetto, Florida, specializes in exactly these hard-to-source power semiconductors. We stock the 1MBI200N-120 as new OEM product and ship same-day on orders received before 5PM EST. Volume pricing is available for MRO stockers and OEM procurement teams. Contact our technical sales team directly at 239-734-7566 or sales@igbts.us to confirm availability, request a quote, or discuss quantity requirements.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
SAME DAY SHIPPING FOR ORDERS PLACED BY 5PM EST ON ALL STOCK ITEMS

** 1 Year Warranty on All Products **
In Stock: 5
  • 5
  • 24 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $179.57 USD
Regular price Sale price $179.57 USD
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